OMRON photoelectric micro sensor EE-SX772

Description

Photomicrosensor, Slot type, Through-beam, T-shaped, Sensing distance: 5 mm (slot width), Dark-ON, Indicator: Incident light, NPN output, Pre-wired model, 2 m

Type Grooved Type (T-shaped)
Luminous method Non-modulated
Sensing method Through-beam type
Sensing distance Slot width: 5 mm
Control output (Output type) NPN open collector output
Operation mode Dark-ON
Connection method Pre-wired models

 

Type Grooved Type (T-shaped)
Luminous method Non-modulated
Sensing method Through-beam type
Sensing distance Slot width: 5 mm
Operation mode Dark-ON
Standard sensing object Opaque, 2 x 0.8 mm min.
Differential distance elements 0.025 mm
Light source （Peak wavelength） GaAs infrared LED (940 nm)
Indicator Light indicator (red)
Power supply voltage 5 to 24 VDC ±10%
ripple (p-p) 10 % max.
Current consumption 12 mA max.
Control output Output type NPN open collector output
Load power supply voltage 5 to 24 VDC
Load curren 100 mA max.
Residual voltage at 100 mA load current: 0.8 V max.
at 40 mA load current: 0.4 V max.
Protection circuits Output short-cut protection
Response frequency elements 3 kHz max.
Illumination on the surface receiver Fluorescent light: 1000 lx max.
Ambient temperature Operating: -25 to 55 ℃ (with no icing)
Storage: -30 to 80 ℃ (with no icing)
Ambient humidity Operating: 5 to 85 % (with no condensation)
Storage: 5 to 95 % (with no condensation)
Vibration resistance Destruction: 10 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock resistance Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree of protection IP64 IEC60529
Connection method Pre-wired models
Cable length 2 m
Weight Package: Approx. 20 g
Material Case: Polybutylene terephthalate (PBT)om
Product form

Photomicrosensor, Slot type, Through-beam, T-shaped, Sensing distance: 5 mm (slot width), Dark-ON, Indicator: Incident light, NPN output, Pre-wired model, 2... Read more

SKU: EE-SX772

$18.55 Excl. VAT

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    Description

    Photomicrosensor, Slot type, Through-beam, T-shaped, Sensing distance: 5 mm (slot width), Dark-ON, Indicator: Incident light, NPN output, Pre-wired model, 2 m

    Type Grooved Type (T-shaped)
    Luminous method Non-modulated
    Sensing method Through-beam type
    Sensing distance Slot width: 5 mm
    Control output (Output type) NPN open collector output
    Operation mode Dark-ON
    Connection method Pre-wired models

     

    Type Grooved Type (T-shaped)
    Luminous method Non-modulated
    Sensing method Through-beam type
    Sensing distance Slot width: 5 mm
    Operation mode Dark-ON
    Standard sensing object Opaque, 2 x 0.8 mm min.
    Differential distance elements 0.025 mm
    Light source （Peak wavelength） GaAs infrared LED (940 nm)
    Indicator Light indicator (red)
    Power supply voltage 5 to 24 VDC ±10%
    ripple (p-p) 10 % max.
    Current consumption 12 mA max.
    Control output Output type NPN open collector output
    Load power supply voltage 5 to 24 VDC
    Load curren 100 mA max.
    Residual voltage at 100 mA load current: 0.8 V max.
    at 40 mA load current: 0.4 V max.
    Protection circuits Output short-cut protection
    Response frequency elements 3 kHz max.
    Illumination on the surface receiver Fluorescent light: 1000 lx max.
    Ambient temperature Operating: -25 to 55 ℃ (with no icing)
    Storage: -30 to 80 ℃ (with no icing)
    Ambient humidity Operating: 5 to 85 % (with no condensation)
    Storage: 5 to 95 % (with no condensation)
    Vibration resistance Destruction: 10 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
    Shock resistance Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions
    Degree of protection IP64 IEC60529
    Connection method Pre-wired models
    Cable length 2 m
    Weight Package: Approx. 20 g
    Material Case: Polybutylene terephthalate (PBT)om

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